?2002 Fairchild Semiconductor Corporation
Rev. A, September 2002
FYPF2010DN
Typical Characteristics
Figure 1. Typical Forward Voltage Characteristics
(per diode)
Figure 3. Typical Junction Capacitance
(per diode)
Figure 5. Forward Current Derating Curve
Figure 2. Typical Reverse Current
vs. Reverse Voltage (per diode)
Figure 4. Thermal Impedance Characteristics
(per diode)
Figure 6. Non-Repetive Surge Current
(per diode)
0.01
0.1
1
10
100
0.0 0.5 1.0 1.5
TJ=125 oC
TJ=75 oC
TJ=25 oC
Forward Voltage Drop, VF[V]
Forward Current, I
F
[A]
0 20406080100
80
10090
200
300
400
500
600
700
800
1000900
TJ=25 oC
Juntion Capacitance, C
J
[pF]
Reverse Voltage, VR[V]
0 20 40 60 80 100 120 140 160
0
5
10
15
20
25
DC
Average Forward Current, I
F(AV)
[A]
Case Temperature, TC[oC]
20 40 60 80 100
1E-3
0.01
0.1
1
10
TJ=125 oC
TJ=75 oC
TJ=25 oC
Reverse Current, I
R
[mA]
Reverse Voltage, VR[V]
100μ 1m 10m 100m 1 10 100
0.1
1
10
Transient Thermal Impedance [
o
C/W]
Pulse Duration [s]
0
1 10 100
50
100
150
200
250
Max. Forward Surge Current, I
FSM
[A]
Number of Cycles @ 60Hz
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